PRESENTATION

Advanced GaN Packaging "AGAPAC"

GaN power transistors will roughly increase power density by more than an order of magnitude for large devices compared to present solutions (0.5 W/mm to 5 W/mm for space applications including de-ratings). The consequences of this will directly impact on packaging technology. The thermal resistance needs to be significantly reduced if the advantages obtained at die level are to be maintained at the module and equipment level. The AGAPAC project aims to address this critical challenge for space satellite applications.

• 15th June 2009
  Space Research projects under the 7th Framework Programme for Research

• 25th/29th May 2009
  International Conference on High Performance Powder Metallurgy Materials.